US Patent Issued to Intel on Nov. 4 for "Fin cut in neighboring gate and source or drain regions for advanced integrated circuit structure fabrication" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,815, issued on Nov. 4, was assigned to Intel Corp. (Santa Clara, Calif.).

"Fin cut in neighboring gate and source or drain regions for advanced integrated circuit structure fabrication" was invented by Leonard P. Guler (Hillsboro, Ore.), Biswajeet Guha (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.), Tsuan-Chung Chang (Portland, Ore.) and Sean Pursel (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Fin cuts in neighboring gate and source or drain regions for advanced integrated circuit structure fabrication is described. For example, an integrated circuit structure includes a horizontal stack of semiconductor nanowire portions. A diele...