US Patent Issued to Intel on Nov. 25 for "Source or drain structures with relatively high germanium content" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,272, issued on Nov. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Source or drain structures with relatively high germanium content" was invented by Cory Bomberger (Portland, Ore.), Anand Murthy (Portland, Ore.), Biswajeet Guha (Hillsboro, Ore.), Anupama Bowonder (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having source or drain structures with a relatively high germanium content are described. In an example, an integrated circuit structure ...