ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,247, issued on Nov. 25, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate-all-around integrated circuit structures having backside contact with enhanced area relative to epitaxial source" was invented by Joseph D'Silva (Hillsboro, Ore.), Mauro J. Kobrinsky (Portland, Ore.), Shaun Mills (Hillsboro, Ore.), Nafees A Kabir (Portland, Ore.), Makram Abd El Qader (Hillsboro, Ore.) and Leonard P. Guler (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having backside contact with enhanced area relative to an epitaxial source or drain region are described. For example, an integrated circuit s...