US Patent Issued to Intel on Nov. 25 for "Differentially programmable magnetic tunnel junction device and system including same" (Oregon, Washington Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,457, issued on Nov. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Differentially programmable magnetic tunnel junction device and system including same" was invented by Ian Alexander Young (Olympia, Wash.), Dmitri Evgenievich Nikonov (Beaverton, Ore.), Chia-Ching Lin (Portland, Ore.), Tanay A. Gosavi (Portland, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Kaan Oguz (Portland, Ore.) and Punyashloka Debashis (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, an integrated circuit component including an array of the memory devices, and an integrated device assembly including the integrated circuit component....