US Patent Issued to Intel on Nov. 18 for "Punch-through interconnect feature to couple upper electrodes of capacitors of multi-level memory arrays" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,183, issued on Nov. 18, was assigned to Intel Corp. (Santa Clara, Calif.).

"Punch-through interconnect feature to couple upper electrodes of capacitors of multi-level memory arrays" was invented by Travis W. Lajoie (Forest Grove, Ore.), Juan Alzate Vinasco (Tigard, Ore.), Abhishek Anil Sharma (Portland, Ore.), Van H. Le (Beaverton, Ore.), Moshe Dolejsi (Portland, Ore.), Yu-Wen Huang (Beaverton, Ore.), Kimberly Pierce (Beaverton, Ore.), Jared Stoeger (Portland, Ore.) and Shem Ogadhoh (West Linn, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) includes a first memory cell and a second memory cell. The first memory cell i...