ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,288, issued on Nov. 11, was assigned to Intel Corp. (Santa Clara, Calif.).
"Three-dimensional nanoribbon-based hysteretic memory" was invented by Wilfred Gomes (Portland, Ore.), Uygar E. Avci (Portland, Ore.) and Abhishek A. Sharma (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional hysteretic memory based on semiconductor nanoribbons is disclosed. An example memory cell may include a nanoribbon-based access transistor and a capacitor coupled to the access transistor, where the capacitor at least partially wraps around the nanoribbon in which the access transistor is formed. One or both of a gate stack of the access tra...