US Patent Issued to Intel on Nov. 11 for "Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material" (Oregon Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,318, issued on Nov. 11, was assigned to Intel Corp. (Santa Clara, Calif.).

"Low defect, high mobility thin film transistors with in-situ doped metal oxide channel material" was invented by Chieh-Jen Ku (Hillsboro, Ore.), Andre Baran (Portland, Ore.), Bernhard Sell (Portland, Ore.), David Goldstein (Beaverton, Ore.) and Timothy Jen (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors with metal oxide channel material that is in-situ doped for desired charge carrier concentrations. The metal oxide channel material may be deposited by atomic layering of multiple constituent metals with an oxidation of each layer. Such an ALD proc...