US Patent Issued to Intel on Nov. 11 for "Diagonal memory with vertical transistors and wrap-around control lines" (Oregon Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,289, issued on Nov. 11, was assigned to Intel Corp. (Santa Clara, Calif.).

"Diagonal memory with vertical transistors and wrap-around control lines" was invented by Abhishek A. Sharma (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example IC device includes a plurality of vertical transistors which may be part of memory cells, thus realizing vertical-transistor based memory. The IC device further includes a wordline, electrically continuous along a first longitudinal axis and electrically coupled to gates of a first subset of the transistors, and a control line that may be either a bitline or a plateline, electrically continuous ...