US Patent Issued to Intel on May 6 for "Semiconductor device having doped epitaxial region and its methods of fabrication" (Oregon Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,027, issued on May 6, was assigned to Intel Corp. (Santa Clara, Calif.).

"Semiconductor device having doped epitaxial region and its methods of fabrication" was invented by Anand S. Murthy (Portland, Ore.), Daniel Boune Aubertine (North Plains, Ore.), Tahir Ghani (Portland, Ore.) and Abhijit Jayant Pethe (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are ...