US Patent Issued to Intel on May 27 for "Skip level vias in metallization layers for integrated circuit devices" (Arizona, Oregon, California Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,794, issued on May 27, was assigned to Intel Corp. (Santa Clara, Calif.).

"Skip level vias in metallization layers for integrated circuit devices" was invented by Adel Elsherbini (Tempe, Ariz.), Mauro Kobrinsky (Portland, Ore.), Shawna Liff (Scottsdale, Ariz.), Johanna Swan (Scottsdale, Ariz.), Gerald Pasdast (San Jose, Calif.) and Sathya Narasimman Tiagaraj (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device may be formed including an electronic substrate and a metallization structure on the electronic substrate, wherein the metallization structure includes a first level comprising a first dielectric materi...