ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,032, issued on May 20, was assigned to Intel Corp. (Santa Clara, Calif.).
"Stacked backend memory with resistive switching devices" was invented by Wilfred Gomes (Portland, Ore.), Abhishek A. Sharma (Hillsboro, Ore.), Van H. Le (Beaverton, Ore.) and Hui Jae Yoo (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "IC devices with stacked backend memory with resistive switching devices are disclosed. An example IC device includes a support structure, a frontend layer with a plurality of frontend devices, and a backend layer with a plurality of resistive switching devices, the resistive switching devices being, e.g., part of memory cells of ...