ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,101, issued on May 20, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication" was invented by Ashish Verma Penumatcha (Beaverton, Ore.), Seung Hoon Sung (Portland, Ore.), Jack Kavalieros (Portland, Ore.), Uygar Avci (Portland, Ore.), Tristan Tronic (Aloha, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Devin Merrill (McMinnville, Ore.), Tobias Brown-Heft (Portland, Ore.), Kirby Maxey (Hillsboro, Ore.), Matthew Metz (Portland, Ore.) and Ian Young (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A complementary metal oxide semiconductor (CMOS...