US Patent Issued to Intel on May 13 for "Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology" (Oregon Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,618, issued on May 13, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gallium nitride (GaN) selective epitaxial windows for integrated circuit technology" was invented by Samuel James Bader (Hillsboro, Ore.), Pratik Koirala (Portland, Ore.), Nicole K. Thomas (Portland, Ore.), Han Wui Then (Portland, Ore.) and Marko Radosavljevic (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a substrate including silicon, the substrate having a top surface. A first trench is in the substrate, the first trench having a first width and a first height. A second trench is in the substrate, the second trench h...