US Patent Issued to Intel on May 13 for "Conformal low temperature hermetic dielectric diffusion barriers" (Oregon Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,537, issued on May 13, was assigned to Intel Corp. (Santa Clara, Calif.).

"Conformal low temperature hermetic dielectric diffusion barriers" was invented by Sean King (Beaverton, Ore.), Hui Jae Yoo (Portland, Ore.), Sreenivas Kosaraju (Portland, Ore.) and Timothy Glassman (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be ach...