US Patent Issued to Intel on March 25 for "Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication" (Oregon Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,122, issued on March 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication" was invented by Atul Madhavan (Portland, Ore.), Nicholas J. Kybert (Portland, Ore.), Mohit K. Haran (Hillsboro, Ore.) and Hiten Kothari (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Contact over active gate (COAG) structures with etch stop layers, and methods of fabricating contact over active gate (COAG) structures using etch stop layers, are described. In an example, an integrated circuit structure includes a plurality of gate structures abov...