US Patent Issued to Intel on March 18 for "Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes" (Arizona, Oregon Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,225, issued on March 18, was assigned to Intel Corp. (Santa Clara, Calif.).

"Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes" was invented by Thomas Sounart (Chandler, Ariz.), Kaan Oguz (Portland, Ore.), Neelam Prabhu Gaunkar (Chandler, Ariz.), Aleksandar Aleksov (Chandler, Ariz.), Henning Braunisch (Phoenix) and I-Cheng Tung (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such thin film capacitors include a titanium dioxide diel...