ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,622, issued on March 11, was assigned to Intel Corp. (Santa Clara, Calif.).
"Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications" was invented by Tanuj Trivedi (Hillsboro, Ore.), Rahul Ramaswamy (Portland, Ore.), Jeong Dong Kim (Scappoose, Ore.), Ting Chang (Portland, Ore.), Walid M. Hafez (Portland, Ore.), Babak Fallahazad (Portland, Ore.), Hsu-Yu Chang (Hillsboro, Ore.) and Nidhi Nidhi (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include nanowire and nanoribbon devices with non-uniform dielectric thicknesses. In an embodiment, the semiconductor device compri...