ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,611, issued on June 24, was assigned to Intel Corp. (Santa Clara, Calif.).
"Source or drain structures with vertical trenches" was invented by Ryan Keech (Portland, Ore.), Nicholas Minutillo (Beaverton, Ore.), Anand Murthy (Portland, Ore.), Aaron Budrevich (Portland, Ore.) and Peter Wells (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first si...