ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,574, issued on June 24, was assigned to Intel Corp. (Santa Clara, Calif.).
"Contact resistance reduction in transistor devices with metallization on both sides" was invented by Koustav Ganguly (Beaverton, Ore.), Ryan Keech (Portland, Ore.), Subrina Rafique (Hillsboro, Ore.), Glenn A. Glass (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Ehren Mannebach (Beaverton, Ore.), Mauro Kobrinsky (Portland, Ore.) and Gilbert Dewey (Beaverton, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include transistor devices and methods of making such devices. In an embodiment, the transistor device comprises a stack of semiconduct...