US Patent Issued to Intel on June 24 for "Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication" (Oregon Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,061, issued on June 24, was assigned to Intel Corp. (Santa Clara, Calif.).

"Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication" was invented by Florian Gstrein (Portland, Ore.), Rami Hourani (Portland, Ore.), Gopinath Bhimarasetti (Portland, Ore.) and James M. Blackwell (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Bottom-up fill dielectric materials for semiconductor structure fabrication, and methods of fabricating bottom-up fill dielectric materials for semiconductor structure fabrication, are described. In an example, a method of fabricating a dielectric material for semi...