US Patent Issued to Intel on June 24 for "Asymmetric gate structures and contacts for stacked transistors" (Oregon, California Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,614, issued on June 24, was assigned to Intel Corp. (Santa Clara, Calif.).

"Asymmetric gate structures and contacts for stacked transistors" was invented by Cheng-Ying Huang (Hillsboro, Ore.), Patrick Morrow (Portland, Ore.), Arunshankar Venkataraman (Mountain View, Calif.), Sean T. Ma (Portland, Ore.), Willy Rachmady (Beaverton, Ore.), Nicole K. Thomas (Portland, Ore.), Marko Radosavljevic (Portland, Ore.) and Jack T. Kavalieros (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having a stacked transistor configuration. An n-channel device and a p-channel device may both be g...