US Patent Issued to Intel on June 17 for "Lithographic cavity formation to enable EMIB bump pitch scaling" (Arizona Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,443, issued on June 17, was assigned to Intel Corp. (Santa Clara, Calif.).

"Lithographic cavity formation to enable EMIB bump pitch scaling" was invented by Kristof Darmawikarta (Chandler, Ariz.), Hiroki Tanaka (Chandler, Ariz.), Robert May (Chandler, Ariz.), Sameer Paital (Chandler, Ariz.), Bai Nie (Chandler, Ariz.), Jesse Jones (Chandler, Ariz.) and Chung Kwang Christopher Tan (Chandler, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include an electronic package with an embedded multi-interconnect bridge (EMIB) and methods of making such packages. Embodiments include a first layer, that is an organic material and a second layer ...