ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,905, issued on June 10, was assigned to Intel Corp. (Santa Clara, Calif.).
"Cavity spacer for nanowire transistors" was invented by William Hsu (Hillsboro, Ore.), Biswajeet Guha (Hillsboro, Ore.), Leonard Guler (Hillsboro, Ore.), Souvik Chakrabarty (Hillsboro, Ore.), Jun Sung Kang (Portland, Ore.), Bruce Beattie (Portland, Ore.) and Tahir Ghani (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the se...