US Patent Issued to Intel on July 8 for "Superluminescent diode with integrated absorber and photodetector" (California Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,758, issued on July 8, was assigned to Intel Corp. (Santa Clara, Calif.).

"Superluminescent diode with integrated absorber and photodetector" was invented by Karan Mehta (San Francisco), Richard Jones (San Mateo, Calif.) and Olufemi Dosunmu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment of a superluminescent diode, a first diode adapted on a semiconductor die is to be forward-biased to output optical energy in response to a bias signal, and a second diode adapted on the semiconductor die is to be reverse-biased, the second diode to receive and absorb back propagating optical energy from the first diode and output a...