ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,353, issued on July 29, was assigned to Intel Corp. (Santa Clara, Calif.).
"Source/drain regions in integrated circuit structures" was invented by Sean T. Ma (Portland, Ore.), Andy Chih-Hung Wei (Yamhill, Ore.) and Guillaume Bouche (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are source/drain regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC structure may include: an array of channel regions, including a first channel region and an adjacent second channel region; a first source/drain region proximate to the first channel region; a secon...