ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,342, issued on July 29, was assigned to Intel Corp. (Santa Clara, Calif.).
"Passivation layers for thin film transistors" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Arnab Sen Gupta (Beaverton, Ore.), Travis W. LaJoie (Forest Grove, Ore.), Sarah Atanasov (Beaverton, Ore.), Chieh-Jen Ku (Hillsboro, Ore.), Bernhard Sell (Portland, Ore.), Noriyuki Sato (Hillsboro, Ore.), Van Le (Beaverton, Ore.), Matthew Metz (Portland, Ore.), Hui Jae Yoo (Hillsboro, Ore.) and Pei-Hua Wang (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor (TFT) structure includes a gate electrode, a gate dielectric layer on the gate electr...