US Patent Issued to Intel on July 22 for "Circuit topology for high performance memory with secondary pre-charge transistor" (American, Indian Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,914, issued on July 22, was assigned to Intel Corp. (Santa Clara, Calif.).

"Circuit topology for high performance memory with secondary pre-charge transistor" was invented by Arindrajit Ghosh (College Station, Texas) and Jaymeen Bharatkumar Aseem (Ahmedabad, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments herein relate to a memory device in which a secondary pre-charge transistor is coupled to each bit line in an array of memory cells. A column select transistor such as an nMOS is between the secondary pre-charge transistor such as a pMOS and a power supply node. The secondary pre-charge transistor and the column select transistor h...