ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,926, issued on July 22, was assigned to Intel Corp. (Santa Clara, Calif.).
"Apparatus and method to optimize sense-amp enable pulse-width in SRAM arrays" was invented by Gururaj K. Shamanna (Austin, Texas), Naveen Kumar M. (Bangalore, India), Jagadeesh Chandra Salaka (Bangalore, India), Pascal A. Meinerzhagen (Hillsboro, Ore.), Sravan K. Puchakayala (Folsom, Calif.) and Iqbal Rajwani (Roseville, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Circuits for optimizing the duration of a sense amp enable signal in a memory device such as SRAM."
The patent was filed on Oct. 18, 2021, under Application No. 17/504,252.
*For further information, inc...