ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,416, issued on July 1, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures" was invented by Gilbert Dewey (Hillsboro, Ore.), Abhishek Sharma (Hillsboro, Ore.), Van Le (Beaverton, Ore.), Jack Kavalieros (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Seung Hoon Sung (Portland, Ore.), Tahir Ghani (Portland, Ore.), Arnab Sen Gupta (Beaverton, Ore.), Nazila Haratipour (Hillsboro, Ore.) and Justin Weber (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor structures may include a metal oxide contact buffer between a po...