US Patent Issued to Intel on July 1 for "Thin film transistors having semiconductor structures integrated with 2D channel materials" (Oregon, Washington Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,442, issued on July 1, was assigned to Intel Corp. (Santa Clara, Calif.).

"Thin film transistors having semiconductor structures integrated with 2D channel materials" was invented by Ashish Verma Penumatcha (Beaverton, Ore.), Uygar E. Avci (Portland, Ore.), Chelsey Dorow (Portland, Ore.), Tanay Gosavi (Portland, Ore.), Chia-Ching Lin (Portland, Ore.), Carl Naylor (Portland, Ore.), Nazila Haratipour (Portland, Ore.), Kevin P. O'Brien (Portland, Ore.), Seung Hoon Sung (Portland, Ore.), Ian A. Young (Olympia, Wash.) and Urusa Alaan (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Thin film transistors having semiconductor structures integ...