US Patent Issued to Intel on July 1 for "Scandium precursor for SC 2 O 3 or SC 2 S 3 atomic layer deposition" (Oregon Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,344,627, issued on July 1, was assigned to Intel Corp. (Santa Clara, Calif.).

"Scandium precursor for SC 2 O 3 or SC 2 S 3 atomic layer deposition" was invented by Patricio E. Romero (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices."

The patent was filed on Nov. 28, 2023, under Application No. 18/522,056.

*For furth...