US Patent Issued to Intel on July 1 for "Device, method and system to provide a stressed channel of a transistor" (Oregon Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,420, issued on July 1, was assigned to Intel Corp. (Santa Clara, Calif.).

"Device, method and system to provide a stressed channel of a transistor" was invented by Rishabh Mehandru (Portland, Ore.), Stephen M. Cea (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.) and Anand S. Murthy (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques and mechanisms to impose stress on a transistor which includes a channel region and a source or drain region each in a fin structure. In an embodiment, a gate structure of the transistor extends over the fin structure, wherein a first spacer portion is at a sidewall of the gate structure and a second ...