ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,438, issued on July 1, was assigned to Intel Corp. (Santa Clara, Calif.).
"Contact gating for 2D field effect transistors" was invented by Kirby Maxey (Hillsboro, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Carl Naylor (Portland, Ore.), Chelsey Dorow (Portland, Ore.), Kevin O'Brien (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Tanay Gosavi (Portland, Ore.) and Uygar Avci (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Transistors, devices, systems, and methods are discussed related to transistors including a number of 2D material channel layers and source and drain control electrodes coupled to source and drain control ...