ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,925, issued on Jan. 28, was assigned to Intel Corp..

"Gate-all-around integrated circuit structures having oxide sub-fins" was invented by Leonard P. Guler (Hillsboro, Ore.), Biswajeet Guha (Hillsboro, Ore.), Tahir Ghani (Portland, Ore.) and Swaminathan Sivakumar (Beaverton, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having oxide sub-fins, and methods of fabricating gate-all-around integrated circuit structures having oxide sub-fins, are described. For example, an integrated circuit structure includes an oxide sub-fin structure having a top and sidewalls. An oxidation catalyst layer is on the to...