US Patent Issued to Intel on Jan. 27 for "Static random-access memory (SRAM) bit cell with channel depopulation" (Oregon Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,466, issued on Jan. 27, was assigned to Intel Corp. (Santa Clara, Calif.).

"Static random-access memory (SRAM) bit cell with channel depopulation" was invented by Peng Zheng (Portland, Ore.), Varun Mishra (Hillsboro, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor c...