US Patent Issued to Intel on Jan. 20 for "Embedded memory with double-walled ferroelectric capacitors" (Oregon Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,480, issued on Jan. 20, was assigned to Intel Corp. (Santa Clara, Calif.).

"Embedded memory with double-walled ferroelectric capacitors" was invented by Wilfred Gomes (Portland, Ore.), Abhishek Anil Sharma (Portland, Ore.) and Uygar Avci (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits with embedded memory that includes double-walled ferroelectric capacitors over an array of access transistors. Capacitor access transistors may be recessed channel array transistors (RCATs) implemented in a monocrystalline material that has been transferred from a donor wafer, or implemented in an amorphous or polycrystalline semicond...