ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,295, issued on Jan. 13, was assigned to Intel Corp. (Santa Clara, Calif.).
"Two transistor memory cells with angled transistors" was invented by Abhishek A. Sharma (Portland, Ore.), Sagar Suthram (Portland, Ore.), Tahir Ghani (Portland, Ore.), Wilfred Gomes (Portland, Ore.) and Anand S. Murthy (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "IC devices implementing 2T memory cells with angled transistors, and related assemblies and methods, are disclosed herein. A transistor is referred to as an "angled transistor" if a longitudinal axis of an elongated semiconductor structure of the transistor (e.g., a fin or a nanoribbon) is neither ...