US Patent Issued to Intel on Jan. 13 for "Gate-all-around integrated circuit structures having epitaxial source or drain region lateral isolation" (Oregon Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,078, issued on Jan. 13, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate-all-around integrated circuit structures having epitaxial source or drain region lateral isolation" was invented by Mohammad Hasan (Aloha, Ore.), Mohit K. Haran (Hillsboro, Ore.), Leonard P. Guler (Hillsboro, Ore.), Pratik Patel (Portland, Ore.), Tahir Ghani (Portland, Ore.), Anand S. Murthy (Portland, Ore.) and Makram Abd El Qader (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having epitaxial source or drain region lateral isolation are described. For example, an integrated circuit structure includes a fir...