US Patent Issued to Intel on Jan. 13 for "Field-effect transistor with hybrid switching mechanism" (Oregon, California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,026, issued on Jan. 13, was assigned to Intel Corp. (Santa Clara, Calif.).

"Field-effect transistor with hybrid switching mechanism" was invented by Abhishek A. Sharma (Hillsboro, Ore.), Anand S. Murthy (Portland, Ore.), Tahir Ghani (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Pushkar Sharad Ranade (San Jose, Calif.) and Sagar Suthram (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Hybrid FETs and methods of forming such hybrid FETs are disclosed. An example hybrid FET includes a channel region, a first region, a second region, a third region, and two gates. A gate may wrap around a portion of the channel region. The channel regi...