US Patent Issued to Intel on Feb. 3 for "Transistors with ferroelectric gates" (Oregon, California Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,349, issued on Feb. 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistors with ferroelectric gates" was invented by Abhishek A. Sharma (Portland, Ore.), Ravi Pillarisetty (Portland, Ore.), Brian S. Doyle (Portland, Ore.), Elijah V. Karpov (Portland, Ore.), Prashant Majhi (San Jose, Calif.), Gilbert W. Dewey (Beaverton, Ore.), Benjamin Chu-Kung (Portland, Ore.), Van H. Le (Beaverton, Ore.), Jack T. Kavalieros (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are transistors with ferroelectric gates, and related methods and devices. For example, in some embodiments, a transisto...