US Patent Issued to Intel on Feb. 3 for "Substrate cavity with stepped walls" (Arizona Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,067, issued on Feb. 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Substrate cavity with stepped walls" was invented by Kristof Darmawikarta (Chandler, Ariz.), Xiao Di Sun Zhou (Tempe, Ariz.) and Tarek A. Ibrahim (Mesa, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein may be related to apparatuses, processes, and techniques related to creating deep cavities within a substrate or at an edge of the substrate, by etching a cavity in the substrate to a first copper stop layer, removing the first copper stop layer, and then etching deeper into the cavity to a second copper stop layer. In embodiments this process ma...