US Patent Issued to Intel on Feb. 3 for "Enriched semiconductor nanoribbons for producing intrinsic compressive strain" (Oregon Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,351, issued on Feb. 3, was assigned to Intel Corp. (Santa Clara, Calif.).

"Enriched semiconductor nanoribbons for producing intrinsic compressive strain" was invented by Ashish Agrawal (Hillsboro, Ore.), Anand Murthy (Portland, Ore.), Jack T. Kavalieros (Portland, Ore.), Rajat K. Paul (Portland, Ore.), Gilbert Dewey (Beaverton, Ore.), Seung Hoon Sung (Portland, Ore.) and Susmita Ghose (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having strained channel regions. In an example, semiconductor nanoribbons of silicon germanium (SiGe) or germanium tin (GeSn) may be formed and s...