ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,721, issued on Feb. 18, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate-all-around integrated circuit structures having asymmetric source and drain contact structures" was invented by Biswajeet Guha (Hillsboro, Ore.), Mauro J. Kobrinsky (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having asymmetric source and drain contact structures, and methods of fabricating gate-all-around integrated circuit structures having asymmetric source and drain contact structures, are described. For example, an integrated circuit structure includes a vertical arrang...