US Patent Issued to Intel on Feb. 10 for "Multiple epitaxial layer source and drain transistors for low temperature computation" (Oregon, California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,733, issued on Feb. 10, was assigned to Intel Corp. (Santa Clara, Calif.).

"Multiple epitaxial layer source and drain transistors for low temperature computation" was invented by Abhishek Sharma (Portland, Ore.), Wilfred Gomes (Portland, Ore.), Anand Murthy (Portland, Ore.), Tahir Ghani (Portland, Ore.), Jack Kavalieros (Portland, Ore.) and Rajabali Koduri (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit dies, systems, and techniques are described related to multiple transistor epitaxial layer source and drain transistor circuits operable at low temperatures. A system includes an integrated circuit die having a num...