US Patent Issued to Intel on Feb. 10 for "Doped STI to reduce source/drain diffusion for germanium NMOS transistors" (Oregon Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,401, issued on Feb. 10, was assigned to Intel Corp. (Santa Clara, Calif.).

"Doped STI to reduce source/drain diffusion for germanium NMOS transistors" was invented by Glenn A. Glass (Portland, Ore.), Anand S. Murthy (Portland, Ore.), Karthik Jambunathan (Hillsboro, Ore.), Cory C. Bomberger (Portland, Ore.), Tahir Ghani (Portland, Ore.), Jack T. Kavalieros (Portland, Ore.), Benjamin Chu-Kung (Portland, Ore.), Seung Hoon Sung (Portland, Ore.) and Siddharth Chouksey (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit transistor structures are disclosed that reduce n-type dopant diffusion, such as phosphorous or arsenic, fr...