US Patent Issued to Intel on Dec. 9 for "Substrate integrated thin film capacitors using amorphous high-k dielectrics" (Arizona Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,443, issued on Dec. 9, was assigned to Intel Corp. (Santa Clara, Calif.).

"Substrate integrated thin film capacitors using amorphous high-k dielectrics" was invented by Aleksandar Aleksov (Chandler, Ariz.), Thomas Sounart (Chandler, Ariz.), Kristof Darmawikarta (Chandler, Ariz.), Henning Braunisch (Phoenix), Prithwish Chatterjee (Tempe, Ariz.) and Andrew J. Brown (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectri...