ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,559, issued on Dec. 9, was assigned to Intel Corp. (Santa Clara, Calif.).
"Capacitor with dual dielectric layers" was invented by Kaan Oguz (Portland, Ore.), I-Cheng Tung (Hillsboro, Ore.), Chia-Ching Lin (Portland, Ore.), Sou-Chi Chang (Portland, Ore.), Matthew V. Metz (Portland, Ore.), Uygar E. Avci (Portland, Ore.) and Arnab Sen Gupta (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments described herein may be related to apparatuses, processes, and techniques related to increasing the capacitance density of MIM capacitors on dies or within packages. In particular, a MIM stack is disclosed that has multiple insulator layers b...