US Patent Issued to Intel on Dec. 30 for "Technologies for current biasing for three-dimensional crosspoint memory cells" (California Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,155, issued on Dec. 30, was assigned to Intel Corp. (Santa Clara, Calif.).

"Technologies for current biasing for three-dimensional crosspoint memory cells" was invented by Jonathan Y. Wang (Folsom, Calif.), Yasir Mohsin Husain (Folsom, Calif.) and Ashraf B. Islam (El Dorado Hills, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for current biasing for memory cells are disclosed. In the illustrative embodiment, a source follower sets a voltage on a bitline of a memory cell. The current through the source follower is limited by a current mirror in series with the source follower. When additional current is required that the source fol...