US Patent Issued to Intel on Dec. 23 for "Epitaxial source/drain back-side device contact structures with wrap around metallization and protective conformal liner" (Oregon Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,075, issued on Dec. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Epitaxial source/drain back-side device contact structures with wrap around metallization and protective conformal liner" was invented by Mohit Haran (Hillsboro, Ore.), Charles Wallace (Portland, Ore.), Leanord Guler (Hillsboro, Ore.), Sukru Yemenicioglu (Portland, Ore.), Mauro Kobrinsky (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Back-side transistor contacts that wrap around a portion of source and/or drain semiconductor bodies, related transistor structures, integrated circuits, systems, and methods of fabrication are di...