US Patent Issued to Intel on Dec. 2 for "Gate tie structures to buried or backside power rails" (Oregon Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,057, issued on Dec. 2, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate tie structures to buried or backside power rails" was invented by Andy Chih-Hung Wei (Yamhill, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having gate tie-down structures between the device gate and a buried/backside power rail (BPR). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure on a semiconductor region. The semiconductor region can be, for example, a fin or a set of one or more nanowires or nanoribbons that extends between a source reg...